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貼片電阻

重要性數據

貼片電阻器,最快250瓦，最快26 GHz

API Inmet展示了很多Powerfilm ?片式電率電容器。哪些外單單從表面貼裝零件不時用來結合衰減器和威爾金森電率分攤器中。貼片電率電容的阻值領域從5到300歐姆，有各類寸尺和外單單從表面治理可供采用。一些設置，值和選擇也可應標準要求展示。

產品設備詳細情況介召

貼片功率電阻

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
26TPC20-40	1	26	BeO	Thick	X, W, S	G, N, T, H	0.02	0.04	0.01
	60	3	BeO	Thin	X	N, T, H	0.25	0.25	0.06
	20	4	AlN	Thin	X, W, S	N, T, H	0.1	0.2	0.04
ANC200-200	30	4	AlN	Thin	X, S	N, T, H	0.2	0.2	0.04
	40	2.5	AlN	Thin	X, W, S	N, T, H	0.25	0.25	0.04
ANC250-375	150	3	AlN	Thin	X	N, T, H	0.25	0.375	0.04
ANC350-225	100	2	AlN	Thin	X	N, T, H	0.35	0.225	0.04
ANC375-375	200	1	AlN	Thin	X	N, T, H	0.375	0.375	0.04
	10	2.5	AlN	Thin	X, W, S	N, T, H	0.05	0.05	0.01
	5	4	AlN	Thin	X, W, S	N, T, H	0.05	0.05	0.01
KAC100-200A	20	3	AlN	Thick	X, S	N, T, H	0.1	0.2	0.04
KAC250-250A	75	5	AlN	Thick	X, S	N, T, H	0.25	0.25	0.04
KAC250-375A	100	3	AlN	Thick	X, S	N, T, H	0.25	0.375	0.04
KAC60-120A	10	4	AlN	Thick	X, S	N, T, H	0.06	0.12	0.025
	3	18	BeO	TaN	X, W, S	G, N, T, H	0.02	0.04	0.01
	5	12.4	BeO	TaN	X, W, S	G, N, T, H	0.025	0.05	0.01
	25	4	BeO	TaN	X, W, S	G, N, T, H	0.05	0.1	0.01
	8	10	BeO	TaN	X, W, S	G, N, T, H	0.05	0.05	0.01
	50	4	BeO	TaN	X, W, S	G, N, T, H	0.075	0.15	0.01
PC50-50	5	4	Alumina	Thick	X, W, S	N, T, H	0.05	0.05	0.01
	65	4	BeO	Thin	X, W, S	N, T, H	0.1	0.2	0.04
	125	1	BeO	Thin	X	N, T, H	0.25	0.25	0.04
	80	1.5	BeO	Thin	X	N, T, H	0.25	0.25	0.06
	150	1	BeO	Thin	X	N, T, H	0.25	0.375	0.04
	250	1	BeO	Thin	X	N, T, H	0.375	0.375	0.04
	10	8	BeO	Thin	X, S	N, T, H	0.05	0.1	0.04
	10	6	BeO	Thin	X, W, S	N, T, H	0.05	0.1	0.025