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芯片衰減器

首要參數值

存儲芯片衰減器,非常高250瓦，非常高18 GHz，準則衰減器在幾乎所有溫暖下平等地大大減少RF瓦數，而溫暖可變性集成塊開發為在耐高溫下減低其衰減，以提供了電磁波調平用需要備考的最宜卡死。團狀衰減器用來調大器用電線路，讀取器，上/下轉化器，相位識別陣列和按鈕用。會根據需要備考的年紀，需要在中含薄或厚電阻功率的BeO，氮化鋁或鈍化鋁瓷器上手工制造集成塊。

品牌：MACOM

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處理芯片衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040